GaN-on-SiC Sub-THz Transmitters

Technical Explanation

Silicon CMOS processes break down at high voltages and cannot produce sufficient power at sub-terahertz frequencies. Gallium Nitride on Silicon Carbide (GaN-on-SiC) exhibits an ultra-wide electronic bandgap and exceptional thermal conductivity. Fabricated with sub-50nm gate lengths, GaN-on-SiC power amplifiers generate several watts of saturated output power at 140 GHz with high power-added efficiency (PAE), making long-range 6G macro-cells feasible.

Key Functions

• Delivers watts of RF output power at sub-terahertz frequencies
• Overcomes severe atmospheric and free-space path loss on macro cell towers
• Exhibits superior thermal dissipation compared to silicon CMOS and SiGe
• Enables kilometer-range sub-THz outdoor cellular coverage